It is anticipated that the market for automotive GaN on silicon technology will continue to expand at a CAGR of 21.2% during the forecast period of 2023-2030. For decades, silicon has remained integral to the technology industry. As there has been a dearth of innovation over the years, the demand has been restricted to a small number of different industries.

The number of electric passenger cars sold worldwide surpassed 5 million in 2018. This indicates that the automobile industry is rapidly transitioning to the use of electric power. The number of optimistic projections estimates that sales of electric vehicles (EVs) will exceed 45 million vehicles annually by the year 2030. GaN has emerged as a viable alternative, enabling end-users improved energy efficiency and greater temperature tolerance than other materials.As a result of these shifts and advances, it is anticipated that the utilization of the GaN on silicon technology would accelerate at a large rate.

GaN-on-Silicon Technology Expected to Reduce Vehicle Charging Time Considerably

A boost in OBC efficiency will result in a shorter amount of time spent charging a vehicle. At this time, a full charge at a charging station with a capacity of 50 kW takes approximately fifty minutes and results in a range of approximately two hundred kilometers (125 miles). Perfectly acceptable for commuters, but a significant obstacle for anyone planning longer drive. The target for the industry is to install 35 kW charging stations, which would reduce the amount of time needed to charge an electric vehicle to less than ten minutes. This would be the ideal amount of time which will be equivalent to the amount of time spentfo filling gas in a combustion engine vehicle.

The Technology Enabling Efficiency and Driving Range

The DC-DC converter acts as a connection between the high-voltage battery pack and the low-voltage auxiliary circuits in the vehicle. DC-DC converters that make use of GaN semiconductors produce devices that are very efficient. These devices feature the highest power density in their class, which helps reduce power loss and the amount of power that is wasted as heat. Because of this one simple but effective design improvement, the vehicle's overall weight has been greatly reduced, which has led to an increase in its driving range.

GaN Enables EVs to Achieve Price Parity with Vehicles Powered by Internal Combustion Engines

The traction inverter is located in the drivetrain of an electric vehicle and is responsible for converting the direct current (DC) coming from the battery into alternating current (AC), which is then used by the motor to power the vehicle's propulsion system. The three-phase alternating current (AC) motors that are the most often utilised in electric vehicles (EVs) nowadays can operate at voltages of up to 1,000 V and switching frequencies of up to 20 kHz. This design gets dangerously near to the operational limits of the silicon-based MOSFETs and insulated-gate bipolar transistors (IGBTs) that are employed in traction inverters at the present time.

The use of GaN technology breaks through these barriers. Longer range, fewer charging cycles, and longer battery life are all provided by a highly efficient traction inverter made with GaN components. The cost of the battery remains the same. Because it operates at 30 kHz, it makes it possible to employ electric motors that are smaller, more efficient, and more powerful. As a result, the same amount of driving range may be achieved with batteries that are smaller, less expensive, and lighter. These upgrades would help make it possible for manufacturers to get closer to price parity with vehicles powered by internal combustion engines, which would result in an expansion of the market for electric vehicles.

Price Correction & Energy Efficiency Are Challenging the Market Growth

In order to sustain this growth, electric automobiles are being pressured to become both more environmentally friendly and more affordable. While progress is being made on battery development, considerable powertrain advances are being driven through innovation. Increases in the efficiency of each component of an electric vehicle's powertrain can have a significant impact on the vehicle's overall efficiency. This is accomplished by a reduction in weight and an overall reduction in physical size, both of which make it possible for alternative design layouts to be implemented. Even though there has been progress made toward batteries that are more effective, lighter, and smaller, this essential component of EVs continues to be the most significant barrier that needs to be overcome before the next generation of cheaper and more energy-efficient vehicles can be introduced.

Organic Growth Strategies Are Primarily Adopted by Key Market Players

Major players are focusing on organic growth techniques such as new launches, product approvals, and a variety of other methods including patents and events. Acquisitions and partnership and cooperation deals were the most common growth strategy observed in the market. The expansion of businesses and their consumer bases has been made possible as a direct result of these strategies. As a result of the growing demand for automotive GaN-on-silicon technology in international markets, market participants in the automotive GaN-on-silicon technology market are likely to benefit from lucrative growth possibilities in the foreseeable future.

200 mm Wafer Size Market Leading the Market

Market for 200 Mm wafer size held the largest market holding about 40% of revenue share in 2021. In order to broaden the range of applications for power conversion, manufacturers are concentrating their efforts on wafers with a size of 200 millimetres. GaN on silicon technology with a 200mm wafer size has a wide range of beneficial characteristics. These characteristics include a large threshold voltage (VTH>2V), low specific on-resistance, dispersion free (20 percent Dynamic RDS-ON), and high voltage ranges (200V and 650V). These characteristics are fueling the product demand for this particular market segment. The GaN-on-Si epitaxy performed at a wafer size of 200 millimetres produces good surface morphology and great reproducibility. In addition to this, it does not exhibit any dispersion and has a low vertical leakage current both when it is at ambient temperature and when it is heated to a temperature of 150 degrees Celsius.

Asia Pacific Remains as the Global Leader

In 2021, the Asia-Pacific region dominated the global market with a revenue contribution of about 37.5% during the forecast period 2023 to 2030. In cost-conscious developing countries such as China and India, operational efficiency continues to be a crucial influencer, and GaN-based power devices have witnessed a spike in the uses of this technology in recent years due to their improved performance. This is largely due to the fact that GaN-based power devices are more efficient. A larger push for rising manufacturing output in the region needed the adoption of efficient technologies and products, which are anticipated to enhance the GaN on Silicon technology over the projected period. This growth was necessitated by the use of efficient technologies and products. During the duration of the forecast, the North America region is anticipated to have strong growth with a CAGR 11%. In North America, the rising rate of adoption of microchips for a variety of automotive applications Investments made in the research and development of cutting-edge technologies have been a driving force behind the expansion of the GaN on silicon technology market in North America. However, during the course of the forecast period, it is anticipated that the GaN market on the silicon technology market in Europe will expand at a compound annual growth rate of 9%.

Clear Market Leaders Dominating the Market

The market for GaN silicon technology displays varying degrees of market consolidation. The market is almost entirely controlled by the top five most powerful competitors at the moment. These firms have a large amount of sway in the market for GaN on silicon technology, and have intense focus oninnovation and deployment. Outsourcing manufacturing capabilities to developing countries is becoming increasingly popular as a means of achieving the goal of creating high-quality goods at competitive prices. The findings of the report's analysis indicate that major competitors in the market are strongly emphasising on research and development in order to secure their positions there for the long term. NXP Semiconductor, GaN Systems, Panasonic Corporation, Fujitsu Semiconductor, Transphorm Inc., Texas Instruments, Qorvo, Inc., OSRAM Opto Semiconductors GmbH, Infineon Technologies AG, and Cree, Inc. are some of the most notable companies currently operating in the global GaN on silicon technology market.

Historical & Forecast Period

This study report represents analysis of each segment from 2022 to 2032 considering 2023 as the base year. Compounded Annual Growth Rate (CAGR) for each of the respective segments estimated for the forecast period of 2024 to 2032.

The current report comprises of quantitative market estimations for each micro market for every geographical region and qualitative market analysis such as micro and macro environment analysis, market trends, competitive intelligence, segment analysis, porters five force model, top winning strategies, top investment markets, emerging trends and technological analysis, case studies, strategic conclusions and recommendations and other key market insights.

Research Methodology

The complete research study was conducted in three phases, namely: secondary research, primary research, and expert panel review. key data point that enables the estimation of Automotive GaN-on-Silicon Technology market are as follows:

• Research and development budgets of manufacturers and government spending
• Revenues of key companies in the market segment
• Number of end users and consumption volume, price and value.
• Geographical revenues generate by countries considered in the report
• Micro and macro environment factors that are currently influencing the Automotive GaN-on-Silicon Technology market and their expected impact during the forecast period.

Market forecast was performed through proprietary software that analyzes various qualitative and quantitative factors. Growth rate and CAGR were estimated through intensive secondary and primary research. Data triangulation across various data points provides accuracy across various analyzed market segments in the report. Application of both top down and bottom-up approach for validation of market estimation assures logical, methodical and mathematical consistency of the quantitative data.

Key questions answered in this report

• What are the key micro and macro environmental factors that are impacting the growth of Automotive GaN-on-Silicon Technology market?
• What are the key investment pockets with respect to product segments and geographies currently and during the forecast period?
• Estimated forecast and market projections up to 2032.
• Which segment accounts for the fastest CAGR during the forecast period?
• Which market segment holds a larger market share and why?
• Are low and middle-income economies investing in the Automotive GaN-on-Silicon Technology market?
• Which is the largest regional market for Automotive GaN-on-Silicon Technology market?
• What are the market trends and dynamics in emerging markets such as Asia Pacific, Latin America, and Middle East & Africa?
• Which are the key trends driving Automotive GaN-on-Silicon Technology market growth?
• Who are the key competitors and what are their key strategies to enhance their market presence in the Automotive GaN-on-Silicon Technology market worldwide?